Blank Cover Image

The use of AlN interlayers to improve GaN growth on A-plane sapphire

著者名:
Koleske, D. D.
Twigg, M. E.
Wickenden, A. E.
Henry, R. L.
Gorman, R. J.
Freitas, J. A. Jr.
Fetami, M.
さらに 2 件
掲載資料名:
Substrate engineering - paving the way to epitaxy : sympoisum held November 29-December 3, 1999, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
587
発行年:
2000
開始ページ:
O7.3.1
出版情報:
Warrendale, Pa.: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558994959 [1558994955]
言語:
英語
請求記号:
M23500/587
資料種別:
国際会議録

類似資料:

1 国際会議録 Enhanced GaN Decomposition at MOVPE Pressures

Koleske, D. D., Wickenden, A. E., Henry, R. L., Twigg, M. E., Culbertson, J. C., Gorman, R. J.

MRS - Materials Research Society
7 国際会議録 GaN decomposition in ammonia

Koleske, D. D., Wickenden, A. E., Henry, R. L.

MRS-Materials Research Society
2 国際会議録 Microstructure of GaN Grown on (1120) Sapphire

Ruterana, P., Wickenden, A. E., Twigg, M. E., Koleske, D. D., Henry, R. L., Tottereau, O.

Materials Research Society
8 国際会議録 Magnetic Resonance Studies of High-Resistivity GaN Films Grown on Al2O3

Glaser, E. R., Kennedy, T. A., Wickenden, A. E., Koleske, D. D., Freitas, J. A., Jr.

MRS - Materials Research Society
3 国際会議録 A Kinetic Model for GaN Growth

Koleske, D. D., Wickenden, A. E., Henry, R. L., DeSisto, W. J., Gorman, R. J.

MRS - Materials Research Society
9 国際会議録 High-Resolution X-ray Diffraction and X-ray Topography Study of GaN on Al2O3

Chaudhuri, J., Ng, M. Hooe, Koleske, D. D., Wickenden, A. E., Henry, R. L.

MRS - Materials Research Society
4 国際会議録 Effect of Growth Temperature on the Microstructure of the Nucleation Layers of GaN Grown by MOCVD on (1120) Sapphire

Wojtowicz, T., Ruterana, P., Twigg, M.E., Henry, R.L., Koleske, D.D., Wickenden, A.E.

Materials Research Society
10 国際会議録 The Reaction of Oxygen with GaN(0001)

Thoms, B. D., Bellitto, V. J., Yang, Y., Koleske, D. D., Wickenden, A. E., Henry, R. L.

Trans Tech Publications
5 国際会議録 The Microstructure of GaN Nucleation Layers Grown by MOCVD on (1120)Sapphire Versus Pressure and Temperature

Wojtowicz, T., Ruterana, P., Twigg, M.E., Henry, R.L., Koleske, D.D., Wickenden, A.E.

Materials Research Society
11 国際会議録 Persistent Photoconductivity in n-Type GaN

Wickenden, A. E., Beadie, G., Koleske, D. D., Rabinovich, W. S., Freitas, J. A., Jr.

MRS - Materials Research Society
6 国際会議録 Surface Energy Constraints for Heteroepitaxial Growth on Compliant Substrates: Morphology of GaN Grown on Sc Layers

Koleske, D. D., Wickenden, A. E., Freitas, J. A., Jr., Kaplan, R., Prokes, S. M.

MRS - Materials Research Society
12 国際会議録 Adsorption and Desorption of Hydrogen on Ga-rich GaN(000l)

Yang, Y., Bellitto, V. J., Thoms, B. D., Koleske, D. D., Wickenden, A. E., Henry, R. L.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12