Systematic methodology for optimizing the trade-off of polysilicon depletion versus boron penetration in sub-0.18-ｦﾌm surface-channel PMOS devices

Systematic methodology for optimizing the trade-off of polysilicon depletion versus boron penetration in sub-0.18-ｦﾌm surface-channel PMOS devices

著者名:

Scott,G.S. ( VLSI Technology,Inc )

掲載資料名:

Microelectronic Device Technology III

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3881

発行年:

1999

開始ページ:

129

終了ページ:

137

出版情報:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819434784 [0819434787]

言語:

英語

請求記号:

P63600/3881

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016694
シリーズID:	PA00000029
会議名:	Microelectronic Manufacturing : Microelectronic Dvece Technology
回次:	1999 : 3rd
会議開催地:	Santa Clara, CA, USA
会議開催年:	1999.09.22-1999.09.23

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