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THE EPITAXIAL GROWTH OF Ge ON Si(100) USING Te AS A SURFACTANT

著者名:
Yang, X.
Cao, R.
Li, J.
Terry, J.
Wu, J.
Pianetta, P.
さらに 1 件
掲載資料名:
Common themes and mechanisms of epitaxial growth : symposium held April 13-15, 1993, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
312
発行年:
1993
開始ページ:
243
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992085 [1558992081]
言語:
英語
請求記号:
M23500/312
資料種別:
国際会議録

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