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MOCVD growth and properties of erbium-doped GaAs

著者名:
掲載資料名:
Rare earth doped semiconductors : symposium held April 13-15, 1993, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
301
発行年:
1993
開始ページ:
15
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558991972 [1558991972]
言語:
英語
請求記号:
M23500/301
資料種別:
国際会議録

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