Lattice Sites and Damage Annealing of Implanted Tm and Er in Si
- 著者名:
Wahl, U. Correia, J. G. Wachter, J. De Langouche, G. Marques, J. G. Moons, R. Vantomme, A. the ISOLDE Collaboration - 掲載資料名:
- Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 469
- 発行年:
- 1997
- 開始ページ:
- 407
- 出版情報:
- Pittsburg, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993730 [1558993738]
- 言語:
- 英語
- 請求記号:
- M23500/469
- 資料種別:
- 国際会議録
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THE INFLUENCE OF IMPLANTATION-INDUCED NON-STOICHIOMETRY ON THE EPITAXIAL RECRYSTALLIZATION OF CoSi2
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