Formation of Counter Doped Shallow Junctions by Boron and Antimony Implantation and Codiffusion in Silicon

Formation of Counter Doped Shallow Junctions by Boron and Antimony Implantation and Codiffusion in Silicon

著者名:

掲載資料名:

Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

469

発行年:

1997

開始ページ:

329

出版情報:

Pittsburg, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993730 [1558993738]

言語:

英語

請求記号:

M23500/469

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016586
シリーズID:	PA00000011
会議名:	Symposium on defects and diffusion in silicon processing
回次:	1997
会議開催地:	San Francisco, CA, USA
会議開催年:	1997.04.01-1997.04.04

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