The Conversion of Czochralski Silicon From p-Type to n-Type by Hydrogen Plasma-Enhanced Thermal Donor Formation

The Conversion of Czochralski Silicon From p-Type to n-Type by Hydrogen Plasma-Enhanced Thermal Donor Formation

著者名:

Job, R.

掲載資料名:

Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

469

発行年:

1997

開始ページ:

101

出版情報:

Pittsburg, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993730 [1558993738]

言語:

英語

請求記号:

M23500/469

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016586
シリーズID:	PA00000011
会議名:	Symposium on defects and diffusion in silicon processing
回次:	1997
会議開催地:	San Francisco, CA, USA
会議開催年:	1997.04.01-1997.04.04

類似資料:

1 国際会議録 A Two-Step Low-Temperature Process for p-n Junction Formation Due to Hydrogen-Enhanced Thermal Donor Formation in p-Type Czochralski Silicon Job, R., Fahrner, W. R., Kazuchits, N. M., Ulyashin, A. G. MRS - Materials Research Society	7 国際会議録 Comparison of Oxygen and Hydrogen Gettering at High-Temperature Postimplantation Annealing of Hydrogen- and Helium-Implanted Czochralski Silicon Job, R., Fahrner, W. R., Ivanov, A. I., Palmetshofer, L., Ulyashin, A. G. MRS - Materials Research Society
2 国際会議録 Oxygen Gettering and Thermal Donor Formation at Postimplantation Annealing of Hydrogen-Implanted Czochralski Silicon Ulyashin, A. G., Bumay, Yu. A., Fahrner, W. R., Ivanov, A. I., Job, R., Palmetshofer, L. MRS - Materials Research Society	8 国際会議録 P-N Junction Diodes Fabricated Based on Donor Formation in Plasma Hydrogenated P-Type Czochralski Silicon Huang, Y.L., Simoen, E., Job, R., Claeys, C., Dungen, W., Ma, Y., Fahrner, W.R., Versluys, J., Clauws, P. Materials Research Society
3 国際会議録 Hydrogen Enhanced Thermal Donor Formation in p-Type Czochralski Silicon with a Denuded Zone Ulyashin, U.G., Petlitskii, A.N., Job, R., Fahrner, W.R. Electrochemical Society	9 国際会議録 Hydrogen Diffusion Characterized by Hydrogen Enhanced Thermal Donor Formation in p-Type Czochralski Silicon at Temperatures Between 350 and 450℃ Huang, Y.L., Ma, Y., Job, R., Fahmer, W.R. Electrochemical Society
4 国際会議録 Hydrogen-plasma-enhanced thermal donor formation in n-type high-resistivity MCZ silicon Simoen, E., Huang, Y. L., Claeys, C., Raft, J. M., Job, R., Fahrner, W. R., Versluys, J., Clauws, P. Electrochemical Society	10 国際会議録 A Low Temperature Technology on the Base of Hydrogen Enhanced Thermal Donor Formation for Future High-Voltage Applications Job, R., Ulyashin, A.G., Fahrner, W.R., Niedernostheide, F.J., Schulze, H.J., Simoen, E., Claeys, C.L., Tonelli, G. SPIE-The International Society for Optical Engineering
5 国際会議録 Analysis of Oxygen Thermal Donor Formation in n-type Cz-Silicon Rafi, J.M., Simoen, E., Claeys, C., Ulyashin, A., Job, R., Fahrner, W., Versluys, J., Clauws, P., Lozano, M., … SPIE-The International Society for Optical Engineering	11 国際会議録 Comparative Raman And Tem Analysis Of The Evolution Of Platelet Defects In Plasma Hydrogenated And Annealed Czochralski Silicon Job, R., Beaufort, M.-F., Barbot, J.-F., Ulyashin, A.G., Fahrner, W.R. Materials Research Society
6 国際会議録 Analysis of Oxygen Thermal Donor Formation in n-type Cz-Silicon Raft, J.M., Simoen, E., Claeys, C., Ulyashin, A., Job, R., Fahrner, W., Versluys, J., Clauws, P., Lozano, M, Campabadal, … Electrochemical Society	12 国際会議録 Bulk and Surface Properties of Cz Silicon After Hydrogen Plasma Treatments Job,R., Ulyashin,A.G., Fahrner,W.R., Markevich,V.P., Murin,L.I., Lindstrom,J.L., Raiko,V., Engemann,J. Electrochemical Society, SPIE-The International Society for Optical Engineering

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