The Properties of GaInAsSb/GaSb Heterostructure Grown by MOCVD and p-GaInAsSb/n-GaSb Photodiodes

The Properties of GaInAsSb/GaSb Heterostructure Grown by MOCVD and p-GaInAsSb/n-GaSb Photodiodes

著者名:

Zhang, Baolin

掲載資料名:

Metal-organic chemical vapor deposition of electronic ceramics II : symposium held on November 27-29 1995, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

415

発行年:

1996

開始ページ:

31

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993181 [1558993185]

言語:

英語

請求記号:

M23500/415

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016581
シリーズID:	PA00000011
会議名:	Symposium on metal-organic chemical vapor deposition of electronic ceramics
回次:	2nd
会議開催地:	Boston, MA, USA
会議開催年:	1995.11.27-1995.11.29

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