Dry Etching of III-V Nitrides

Dry Etching of III-V Nitrides

著者名:

掲載資料名:

Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

395

発行年:

1996

開始ページ:

717

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992986 [1558992987]

言語:

英語

請求記号:

M23500/395

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016579
シリーズID:	PA00000011
会議名:	International symposium on gallium nitride and related materials
回次:	1st
会議開催地:	Boston, MA, USA
会議開催年:	1995.11.27-1995.12.01

類似資料:

1 国際会議録 ICP Dry Etching of III-V Nitrides Vartuli, C. B., Lee, J. W., MacKenzie, J. D., Donovan, S. M., Abernathy, C. R., Pearton, S. J., Shul, R. J., … MRS - Materials Research Society	7 国際会議録 Effect of Dry Etching in III-Nitride Surface Properties Ren, F., Lothian, J.R., Pearton, S.J., Abernathy, C.R., Vartuli, C.B., Karlicek, B., Karlicek, R.F., Jr., MacKenzie, … Electrochemical Society
2 国際会議録 Plasma Chemistries for Dry Etching GaN, AlN, InGaN and InAlN Pearton, S. J., Vartuli, C. B., Lee, J. W., Donovan, S. M., MacKenzie, J. D., Abernathy, C. R., Shul, R. J., McLane, G. … MRS - Materials Research Society	8 国際会議録 Selective Etching of Wide-Bandgap Nitrides Shul, R. J., Willison, C. G., Bridges, M. M., Han, J., Lee, J. W., Pearton, S. J., Abernathy, C. R., MacKenzie, J. D., … MRS - Materials Research Society
3 国際会議録 Magnetron Reactive Ion Etching of III-V Nitride Semiconductors McLane, G.F., Pearton, S.J., Abernathy, C.R. Electrochemical Society	9 国際会議録 ICP Etching of GaAs Via Hole Contacts Shul, R.J., Baca, A.G., Briggs, R.D., McClellan, G.B., Pearton, S.J., Constantine, C. Electrochemical Society
4 国際会議録 The Role of Plasma Chemistry and Ion Density in Dry Etching of Nitrides Vartuli, C.B., Pearton, S.J., Abernathy, C.R., Shul, R.J., Ren, F. Electrochemical Society	10 国際会議録 Dry Etching and Implantation Characteristics of III-N Alloys Pearton, S.J., Vartuli, C.B., Shul, R.J., Zolper, J.C. Electrochemical Society
5 国際会議録 Comparison of ICI and Ibr for Dry Etching of III-Nitrides Vartuli, C. B., Lee, J. W., MacKenzie, J. D., Pearton, S. J., Abernathy, C. R., Shul, R. J. MRS - Materials Research Society	11 国際会議録 High-Density Plasma Etching of Group-III Nitride Films for Device Application Shul, R., Zhang, L, Baca, A., Han, J., Crawford, M., Willison, C., Pearton, S., Ren, F., Zolper, J., Lester, L. Electrochemical Society
6 国際会議録 Parametric Study of Compound Semiconductor Etching Utilizing Inductively Coupled Plasma Source Constantine, C., Johnson, D., Barratt, C., Shul, R. J., McClellan, G. B., Briggs, R. D., Rieger, D. J., Karlicek, R. F., … MRS - Materials Research Society	12 国際会議録 Low Bias Dry Etching of SiC and SiCN in ICP NF3 Discharges Wang, J. J., Cho, Hyun, Lambers, E. S., Pearton, S. J., Ostling, M., Zetterling, C-M., Grow, J. M., Ren, F., Shul, R. … MRS - Materials Research Society

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