On Compensation and Impurities in State-of-the-Art GaN Epilayers Grown on Sapphire

On Compensation and Impurities in State-of-the-Art GaN Epilayers Grown on Sapphire

著者名:

Wickenden, A. E.

掲載資料名:

Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

395

発行年:

1996

開始ページ:

679

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992986 [1558992987]

言語:

英語

請求記号:

M23500/395

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016579
シリーズID:	PA00000011
会議名:	International symposium on gallium nitride and related materials
回次:	1st
会議開催地:	Boston, MA, USA
会議開催年:	1995.11.27-1995.12.01

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2 国際会議録 Growth of Silicon-Doped and High Quality, Highly Resistive GaN for FET Applications Doverspike, K., Wickenden, A. E., Binari, S. C., Gaskill, D. K., Freitas, J. A., Jr. MRS - Materials Research Society	8 国際会議録 Excitonic Recombination Processes in Undoped and Doped Wurtzite GaN Films Deposited on Sapphire Substrates Freitas, J. A., Jr., Doverspike, K., Wickenden, A. E. MRS - Materials Research Society
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