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2.2 eV Luminescence in GaN

著者名:
Hofmann, D. M.
Kovalev, D.
Steude, G.
Volm, D.
Meyer, B. K.
Xavier, C.
Monteiro, T.
Pereira, E.
Mokov, E. N.
Amano, H.
Akasaki, I.
さらに 6 件
掲載資料名:
Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
395
発行年:
1996
開始ページ:
619
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992986 [1558992987]
言語:
英語
請求記号:
M23500/395
資料種別:
国際会議録

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1 国際会議録 Photoluminescence Excitation Studies of the Optical Transitions in GaN

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2 国際会議録 Optical Investigations of AlGaN on GaN Epitaxial Films

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9 国際会議録 Spatially-Resolved Photoluminescence and Raman Study on the GaN/Substrate Interface

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