ScAlMgO4: An Oxide Substrate for GaN Epitaxy

ScAlMgO4: An Oxide Substrate for GaN Epitaxy

著者名:

Hellman, E. S.

掲載資料名:

Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

395

発行年:

1996

開始ページ:

51

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992986 [1558992987]

言語:

英語

請求記号:

M23500/395

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016579
シリーズID:	PA00000011
会議名:	International symposium on gallium nitride and related materials
回次:	1st
会議開催地:	Boston, MA, USA
会議開催年:	1995.11.27-1995.12.01

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2 国際会議録 Etching and Hydrogen Incorporation in ScAlMgO4 Brandle, C. D., Ren, F., Wilson, R. G., Lee, J. W., Pearton, S. J., Zavada, J. M. MRS - Materials Research Society	8 国際会議録 Reactive MBE Growth of GaN and GaN:H on GaN/SiC Substrates Johnson, M. A. L., Yu, Zhonghai, Boney, C., Hughes, W. C., Cook, J. W., Jr., Schetzina, J. F., Zhao, H., Skromme, B. J., … MRS - Materials Research Society
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4 国際会議録 Gain Spectra and Stimulated Emission in Epitaxial (In,Al) GaN Thin Films Wiesmann, D., Brener, I., Pfeiffer, L. N., Khan, M. A., Sun, C. J., Chang, C. S., Fang, W., Chuang, S. L. MRS - Materials Research Society	10 国際会議録 Direct Growth of High Quality GaN by Plasma Assisted Molecular Beam Epitaxy on 4H-SiC Substrates Fossard, F., Brault, J., Gogneau, N., Monroy, E., Enjalbert, F., Dang, L.S., Bellet-Amalric, E., Monnoye, S., Mank, H., … Trans Tech Publications
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6 国際会議録 ALUMINUM INCORPORATION IN CUPRATE PEROVSKITES Siegrist, T., Schneemeyer, L. F., Waszczak, J. V., Sunshine, S. A., Singh, N. P., Opila, R. L., Batlogg, B., Rupp, L. … Materials Research Society	12 国際会議録 Tunnel Junctions Prepared Using BKBO Thin Films P.M. Tedrow, A. Kussmaul, G.M. Roesler, Jr., E.S. Hellman, E.H. Hartford Electrochemical Society

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