Blank Cover Image

Carrier-Induced Changes in the Gap States of Undoped a-Si:H Films

著者名:
掲載資料名:
Amorphous silicon technology, 1995 : Symposium held April 18-21, 1995, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
377
発行年:
1995
開始ページ:
379
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992801 [1558992804]
言語:
英語
請求記号:
M23500/377
資料種別:
国際会議録

類似資料:

1 国際会議録 PHOTOCAPACITANCE STUDIES OF LIGHT INDUCED CHANGES IN THE DENSITY OF GAP STATES OF N-TYPE DOPED AND UNDOPED HYDROGENATED AMORPHOUS SILICON FILMS

Gelatos, A.V., Cohen, J.D.

Materials Research Society
7 国際会議録 Investigation of Silicon-Germanium Films Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Laser Assistance

C. Lee, J. Cheng, Y. Chen, T. Tsai

Electrochemical Society
2 国際会議録 Improvement of Single-junction a-Si:H Thin-film Solar Cells Toward 10% Efficiency

P.H. Cheng, S.W. Liang, Y.P. Lin, H.J. Hsu, C.H. Hsu, C.C. Tsai

Materials Research Society
8 国際会議録 Plasma Induced Changes to TCO/a-Si:H Interfaces

Wallinga, J., Knoesen, D., Hamers, E. A. G., Sark, W. G. J. H. M. van, Weg, W. F. van der, Schropp, R. E. I.

MRS - Materials Research Society
3 国際会議録 High-Performance Low Temperature Poly-Silicon Thin Film Transistors Fabricated by Excimer Laser Irradiation with Bottom-Gate Scheme

C. Tsai, H. Chen, Y. Lee, H. Cheng

Electrochemical Society
9 国際会議録 The Role of Charged Gap States in Light-Induced Degradation of Single-Junction a-Si:H Solar Cells

Zeman, M., Nadazdy, V., Metselaar, J.W.

Materials Research Society
4 国際会議録 Evolution of Charged Gap States in a-Si:H Under Light Exposure

Zeman, M., Nadazdy, V., Swaaij, R. A. C. M. M. van, Durny, R., Metselaar, J. W.

Materials Research Society
10 国際会議録 STUDY OF THE DENSITY OF BULK GAP STATES IN UNDOPED a-Si:H BY DEPLETION WIDTH MODULATION ELECTRON SPIN RESONANCE

Essick, J. M., Cohen, J. D.

Materials Research Society
5 国際会議録 Evolution of D0 and Non-D0 Light Induced Defect States in a-Si:H Materials and Their Respective Contribution to Carrier Recombination

Pearce, J.M., Deng, J., Vlahos, V., Collins, R.W., Wronski, C.R., Whitaker, J., Taylor, P.C.

Materials Research Society
11 国際会議録 ELECTRON MICROSCOPY STUDIES OF UNDOPED AND PHOSPHORUS DOPED Si:H AND Si,C:H FILMS

Chen, Y.L., Bentley, J., Wang, C., Lucovsky, G., Maher, D.M.

Materials Research Society
6 国際会議録 LIGHT-INDUCED METASTABLE DEFECTS IN a-Si:H: TOWARDS AN UNDERSTANDING

Stutzmann, H., Jackson, W.B., Tsai, C.C.

Materials Research Society
12 国際会議録 Multiple Negative-Differential-Resistance (MNDR) of a Graded AlxGa1-xAs/GaAs Heterostructure-Emitter Bipolar Transistor (HEBT) with a Pseudomorphic InGaAs/GaAs …

Liu, W.-C., Tsai, J.-H., Cheng, S.-Y., Wang, W.-C., Lin, P.-H., Chen, J.-Y.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12