REDUCTION OF DEFECTS IN HIGHLY LATTICE MISMATCHED InGaAs GROWN ON GaAs BY MOCVD
- 著者名:
- 掲載資料名:
- Evolution of thin film and surface structure and morphology : symposium held November 28-December 2, 1994, Boston, Massachusetts, USA
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 355
- 発行年:
- 1995
- 開始ページ:
- 649
- 出版情報:
- Pittsburgh, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992566 [1558992561]
- 言語:
- 英語
- 請求記号:
- M23500/355
- 資料種別:
- 国際会議録
類似資料:
MRS - Materials Research Society |
7
国際会議録
Dislocations and Traps in MBE-Grown Lattice-Mismatched p-InGaAs/GaAs Layers on GaAs substrates
MRS - Materials Research Society |
2
国際会議録
In-Situ Monitoring of MOCVD Grown InxAl1-xAs/GaAs Epitaxial Layers by Two Laser Beams Reflectometry
MRS - Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
9
国際会議録
Passivation of InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers by Amorphous GaAs Deposition
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |