InAsSb-based midinfrared lasers(3.5 to 3.9 ｦﾌm)and light-emitting diodes with AlAsSb claddings and semimetal electron injection grown by metal-organic chemical vapor deposition

InAsSb-based midinfrared lasers(3.5 to 3.9 ｦﾌm)and light-emitting diodes with AlAsSb claddings and semimetal electron injection grown by metal-organic chemical vapor deposition

著者名:

Allerman,A.A. ( Sandia National Labs. )
Biefeld,R.M.
Kurtz,S.R.

掲載資料名:

In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3001

発行年:

1997

開始ページ:

336

終了ページ:

343

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819424129 [0819424129]

言語:

英語

請求記号:

P63600/3001

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016568
シリーズID:	PA00000029
会議名:	Photonics West : In-Plane Semiconductor Lasers
回次:	1997
会議開催地:	San Jose, CA, USA
会議開催年:	1997.02.10-1997.02.13

類似資料:

1 国際会議録 Preparation of AlAsSb and Mid-Infrared (3-5 ｦﾌm) Lasers by Metalorganic Chemical Vapor Deposition Allerman, A. A., Biefeld, R. M., Kurtz, S. R. MRS - Materials Research Society	7 国際会議録 The Growth and Optimization of InPSb/InGaAs/InAsSb Strained-Layer Superlattice Emitters by Metal Organic Chemical Vapor Depositon Biefeld, R. M., Kurtz, S. R. MRS - Materials Research Society
2 国際会議録 Development of InAsSb-based light-emitting diodes for chemical sensing systems Allerman,A.A., Kurtz,S.R., Biefeld,R.M., Baucom,K.C., Burkhart,J.H. SPIE-The International Society for Optical Engineering	8 国際会議録 The Role of Nitrogen-Induced Localization and Defects in InGaAsN (= 2 N):Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor … Kurtz, Steven R., Allerman, A.A., Klem, J.F., Sieg, R.M., Seager, C.H., Jones, E.D. Materials Research Society
3 国際会議録 The growth of InAsSb/InAs/InPSb/InAs mid-infrared emitters by metal-organic chemical vapor deposition Biefeld, R. M., Phillips, J. D., Kurtz, S. R. MRS-Materials Research Society	9 国際会議録 High-Power InAsSb/InAsSbP Laser Diodes Emitting at 3｡ﾁ5 ｦﾌm Range Razeghi, M., Diaz, J., Yi, H-J., Wu, D., Lane, B., Rybaltowski, A., Xiao, Y., Jeon, H. MRS - Materials Research Society
4 国際会議録 The Growth and Doping of Al(As)Sb by Metal-Organic Chemical Vapor Deposition Biefeld, R. M., Allerman, A. A., Kurtz, S. R. MRS - Materials Research Society	10 国際会議録 InAsSb/InAlAsSb Quantum-Well Diode Lasers Emitting Between 3 and 4 ｦﾌm Turner, G. W., Choi, H. K., Manfra, M. J., Connors, M. K. MRS - Materials Research Society
5 国際会議録 THE OPTIMIZATION OF INTERFACES IN InAsSb/InGaAs STRAINED-LAYER SUPERLATTICES GROWN BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION Biefeld, R. M., Baucom, K. C., Kurtz, S. R. MRS - Materials Research Society	11 国際会議録 High-power InAsSb/InAsSbP laser diodes emitting at 3-to 5-ｦﾌm range Razeghi,M., Diaz,J., Yi,H.J., Wu,D., Lane,B., Rybaltowski,A., Xiao,Y.H., Jeon,H. SPIE-The International Society for Optical Engineering
6 国際会議録 Recent Progress in the Growth of Mid-IR Emitters by Metalorganic Chemical Vapor Deposition Biefeld, R. M., Allerman, A. A., Kurtz, S. R., Baucom, K. C. MRS - Materials Research Society	12 国際会議録 InAsSb/InAIAsSb quantum well diode lasers emitting beyond 3 ｦﾌm Choi,H.K., Turner,G.W., Manfra,M.J., Connors,M.K., Herrmann,F.P., Baliga,A., Anderson,N.G. SPIE-The International Society for Optical Engineering

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