Properties of Multi-layered AIN Substrate for High Frequency Devices
- 著者名:
- Shiraishi,Junichi ( SUMITOMO ELECTRIC INDUSTRIES,INC. )
- Hirose,Y.
- Goto,T.
- Yamanaka,S.
- 掲載資料名:
- Proceedings : 1995 International Symposium on Microelectronics, October 24-26, 1995, Los Angels Convention Center, Los Angeles, California
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 2649
- 発行年:
- 1995
- 開始ページ:
- 445
- 終了ページ:
- 450
- 出版情報:
- Reston, VA: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780930815448 [0930815440]
- 言語:
- 英語
- 請求記号:
- P63600/2649
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Effects of 3C-SiC Intermediate Layer on the Properties of AIN Films Grown on SiO2/Si Substrate
Trans Tech Publications |
Elsevier |
SPIE-The International Society for Optical Engineering |
Electrochemical Society |
SPIE - The International Society for Optical Engineering, IMAPS |
Materials Research Society |
SPIE - The International Society for Optical Engineering, IMAPS |
Materials Research Society |
5
国際会議録
High Frequency Electrical Characterization of a Via Hole in a Multi-layered Organic Substrate
SPIE - The International Society for Optical Engineering |
Trans Tech Publications |
Trans Tech Publications |
Electrochemical Society |