Improvement of Hg0.78Cd0.22Te diode characteristics by hydrogenation

Improvement of Hg0.78Cd0.22Te diode characteristics by hydrogenation

著者名:

Kim, Y.H. ( Korea Advanced Institute of Science and Technology, Korea )
Bae, S.H.
Kim, C.K.
Lee, H.C.

掲載資料名:

Infrared technology and applications XXIV : 19-24 July 1998, San Diego, California

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3436

発行年:

1998

巻:

Part 1

開始ページ:

98

終了ページ:

103

出版情報:

Bellingham, Wash., USA: SPIE

ISSN:

0277786X

ISBN:

9780819428912 [0819428914]

言語:

英語

請求記号:

P63600/3436

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016480
シリーズID:	PA00000029
会議名:	Optics & Photonics : Infrared technology and applications
回次:	1998 : 24th
会議開催地:	San Diego, CA, USA
会議開催年:	1998.07.19-1998.07.24

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