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RF bias effects on properties of hydrogenated amorphous silicon deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition

著者名:
  • Hirano,Y. ( NHK Science and Technical Research Labs. (Japan) )
  • Sato,F. ( NHK Science and Technical Research Labs. (Japan) )
  • Jayatissa,A.H. ( NHK Science and Technical Research Labs. (Japan) )
  • Ohtake,H. ( NHK Science and Technical Research Labs. (Japan) )
  • Takizawa,K. ( NHK Science and Technical Research Labs. (Japan) )
掲載資料名:
Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
3287
発行年:
1998
開始ページ:
341
終了ページ:
348
出版情報:
Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819427267 [0819427268]
言語:
英語
請求記号:
P63600/3287
資料種別:
国際会議録

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