Selective formation of InxGa1-xAs quantum dots by molecular beam epitaxy

Selective formation of InxGa1-xAs quantum dots by molecular beam epitaxy

著者名:

Park,Y.J. ( Korea Institute of Science and Technology )

Hahn,C.K. ( Korea Institute of Science and Technology )

Kim,K.M. ( Korea Institute of Science and Technology )

Jung,S.K. ( Korea Institute of Science and Technology )

Kim,E.K. ( Korea Institute of Science and Technology )

Min,S.-K. ( Korea Institute of Science and Technology )

さらに 1 件

掲載資料名:

Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3287

発行年:

1998

開始ページ:

305

終了ページ:

312

出版情報:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819427267 [0819427268]

言語:

英語

請求記号:

P63600/3287

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016453
シリーズID:	PA00000029
会議名:	Photonics West : Photodetectors
回次:	1998 : 3rd
会議開催地:	San Jose, CA, USA
会議開催年:	1998.01.28-1998.01.30

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