Large bandgap shift in InGaAs(P)/Inp multiquantum well structure obtained by impurity-free vacancy diffusion using SiO2 capping and its application to photodetectors
- 著者名:
- 掲載資料名:
- Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 3287
- 発行年:
- 1998
- 開始ページ:
- 88
- 終了ページ:
- 95
- 出版情報:
- Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819427267 [0819427268]
- 言語:
- 英語
- 請求記号:
- P63600/3287
- 資料種別:
- 国際会議録
類似資料:
SPIE - The International Society for Optical Engineering |
MRS - Materials Research Society |
SPIE - The International Society of Optical Engineering |
MRS - Materials Research Society |
Materials Research Society | |
MRS - Materials Research Society |
MRS - Materials Research Society |
5
国際会議録
Impurity-free intermixing of InGaAs/GaAs-strained multiple quantum well infrared photodetectors
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
MRS-Materials Research Society |