Ionization coefficient measurements in InP by using multiplication noise characteristics of InP/InGaAs separate absorption,grading,charge,and multiplication (SAGCM) avalanche photodiodes (APDs)
- 著者名:
- An,S. ( Nortel Technology Ltd. (Canada) and Simon Fraser Univ.(Canada) )
- Clark,W.R. ( Nortel Technology Ltd. (Canada) )
- Deen,M.J. ( Simon Fraser Univ.(Canada) )
- Vetter,A.S. ( Nortel Technology Ltd. (Canada) )
- Svilans,M. ( Nortel Technology Ltd. (Canada) )
- 掲載資料名:
- Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 3287
- 発行年:
- 1998
- 開始ページ:
- 48
- 終了ページ:
- 59
- 出版情報:
- Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819427267 [0819427268]
- 言語:
- 英語
- 請求記号:
- P63600/3287
- 資料種別:
- 国際会議録
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12
国際会議録
High-speed resonant-cavity avalanche photodiodes with separate absorption and multiplication regions
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