Feasibility study to determine the suitability of using TiN/W and Si1-xGex as alternative gate materials for sub-0.1-ヲフm gate-length PMOS devices
- 著者名:
- Murtaza,S.S. ( Texas Instruments Inc. )
- Hu,J.C. ( Texas Instruments Inc. )
- Unnikrishnan,S. ( Texas Instruments Inc. )
- Rodder,M. ( Texas Instruments Inc. )
- Chen,I.-C. ( Texas Instruments Inc. )
- 掲載資料名:
- Microelectronic device technology II : 23-24 September, 1998, Santa Clara, California
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 3506
- 発行年:
- 1998
- 開始ページ:
- 49
- 終了ページ:
- 55
- 出版情報:
- Bellingham, Washington: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819429650 [0819429651]
- 言語:
- 英語
- 請求記号:
- P63600/3506
- 資料種別:
- 国際会議録
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