Blank Cover Image

High-power 980-nm InGaAs/GaAs/AIGaAs window structure lasers fabricated by impurity-free vacancy diffusion

著者名:
Xu,Z. ( Beijing Polytechnic Univ.(China) and Institute of Semiconductors (China) )
Yang,G. ( Institute of Semiconductors (China) )
Yin,T. ( Beijing Polytechnic Univ.(China) )
Lian,P. ( Beijing Polytechnic Univ.(China) )
Li,B. ( Institute of Semiconductors (China) )
Zhang,J. ( Institute of Semiconductors (China) )
Gao,G. ( Beijing Polytechnic Univ.(China) )
Xu,J. ( Institute of Semiconductors (China) )
Chen,L. ( Institute of Semiconductors (China) )
Shen,G. ( Beijing Polytechnic Univ.(China) )
さらに 5 件
掲載資料名:
Semiconductor Lasers III
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
3547
発行年:
1998
開始ページ:
54
終了ページ:
60
出版情報:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819430083 [0819430080]
言語:
英語
請求記号:
P63600/3547
資料種別:
国際会議録

類似資料:

1 国際会議録 Carbon-doped 980-nm InGaAs strained quantum well lasers grown by metal-organic chemical vapor deposition (Invited Paper)

Yin,T., Lian,P., Xu,Z., Chen,C., Zhao,H., Zou,D., Chen,J., Gao,G., Du,J., Tao,C., Shen,G., Lu,H., Zheng,L., Chen,L.

SPIE-The International Society for Optical Engineering
7 国際会議録 Low-divergence high-power 980-nm single-mode diode lasers with asymmetric epitaxial structure

Gao, W., Xu, Z., Nelson, A., Luo, K., Wan, J.Z., Yang, H., Cheng, L., Chin, A.K.

SPIE-The International Society for Optical Engineering
2 国際会議録 Growth and fabrication of high-performance 980-nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AIGaAs

Yang,G., Xu,Z., Xu,J., Ma,X., Zhang,J., Chen,L.

SPIE-The International Society for Optical Engineering
8 国際会議録 Disordering of InGaAs/GaAs multiquantum well structure by impurity-free vacancy diffusion for advanced optoelectronic devices and their integration

Yu, J.S., Kim, J.M., Lee, Y.T., Song, J.D., Lim, H.

SPIE - The International Society of Optical Engineering
3 国際会議録 Design and fabrication of 980-nm InGaAs/A1GaAs quantum well lasers with low beam divergence

Yang,G., Xu,J., Xu,Z., Chen,L., Wang,Q.

SPIE-The International Society for Optical Engineering
9 国際会議録 Longitudinally resolved measurements of carrier concentration and gain in 980-nm InGaAs/GaAs high-power quantum well lasers

Bennett,A.J., Sargent,E.H., Clayton,R.D., Kim,H.B., Xu,J.M.

SPIE-The International Society for Optical Engineering
4 国際会議録 High-power and highly reliable 980-nm lasers with window structure using impurity-free vacancy disordering

Yamada, Y., Fujimoto, T., Uchida, K.

SPIE - The International Society of Optical Engineering
10 国際会議録 Operating characteristics of 980-nm high-power semiconductor laser stracked arrays packaged by microchannel coolers [6020-90]

Gao X., Bo B., Qu Y., Zhang J., Li H.

SPIE - The International Society of Optical Engineering
5 国際会議録 High-quality carbon-doped GaAs/AIGaAs material growth by MOCVD and its application for optoelectronic devices

Lian,P., Yin,T., Xu,Z., Zhao,H., Zou,D., Gao,G., Du,J., Chen,C., Tao,C., Chen,J., Shen,G., Cao,Q., Ma,X., Chen,L.

SPIE-The International Society for Optical Engineering
11 国際会議録 Influence of graded index waveguides on the gain difference between TE0 and TM0 modes of semiconductor optical amplifiers

Chen,C., Xu,Z., Yin,T., Lian,P., Zhao,H., Gao,G., Chen,J., Zou,D., Shen,G., Xu,J., Yang,G., Chen,L., Wang,Q.

SPIE-The International Society for Optical Engineering
6 国際会議録 High-efficiency low-vertical-divergence-angle 980-nm Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers

Xu,Z., Zhang,J., Ma,X., Yang,G., Shen,C., Chen,L.

SPIE - The International Society for Optical Engineering
12 国際会議録 High-power 1O60-nm InGaAs/GaAs single-mode laser diodes

Gao, W., Mastrovito, A., Luo, K., Cheng, L., Nelson, A., Yang, T., Xu, Z.

SPIE - The International Society of Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12