High-performance 155-ヲフm InGaAsP/InP strained-layer quantum well laser diodes fabricated by MOCVD overgrowth method
- 著者名:
Ma,X. ( Institute of Semiconductors (China) ) Cao,Q. ( Institute of Semiconductors (China) ) Wang,S. ( Institute of Semiconductors (China) ) Guo,L. ( Institute of Semiconductors (China) ) Wang,Z. ( Institute of Semiconductors (China) ) Wang,L. ( Institute of Semiconductors (China) ) He,G. ( Institute of Semiconductors (China) ) Yang,Y. ( Institute of Semiconductors (China) ) Zhang,H. ( Institute of Semiconductors (China) ) Zhou,X. ( Institute of Semiconductors (China) ) Chen,L. ( Institute of Semiconductors (China) ) - 掲載資料名:
- Semiconductor Lasers III
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 3547
- 発行年:
- 1998
- 開始ページ:
- 8
- 終了ページ:
- 11
- 出版情報:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819430083 [0819430080]
- 言語:
- 英語
- 請求記号:
- P63600/3547
- 資料種別:
- 国際会議録
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