1.

Conference Proceedings
Conference Proceedings
1. Power Schottky Rectifiers and Microwave Transistors in 4H-SiC
Wahab,Q. ; Rudner,S. ; Janzen,E.
Pub. info.: Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999).  Part1  pp.668-671,  2000.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3975
2.

Conference Proceedings
Conference Proceedings
2. Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD
Ellison,A. ; Kimoto,T. ; Ivanov,I.G. ; Wahab,Q. ; Henry,A. ; Kordina,O. ; Zhang,J. ; Hemmingsson,C.G. ; Gu,C.-Yu. ; Leys,M.R. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.103-106,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. Silicon Carbide,A Semiconductor for Power Devices
Wahab,Q. ; Janzen,E.
Pub. info.: Physics of - Semiconductor Devices -.  Part 1  pp.690-693,  1998.  New Delhi.  Narosa Publishing House
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3316
4.

Conference Proceedings
Conference Proceedings
4. High-Voltage(>2.5kV)4H-SiC Schottky Reetifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers
Kimoto,T. ; Wahab,Q. ; Ellison,A. ; Forsberg,U. ; Tuominen,M. ; Yakimova,R. ; Henry,A. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.921-924,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268