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10 results

Conference Proceedings

1. Optically Detected Wagnetic Resotrance Studies of Non-Radiative Recombination Centres in 6H SiC

Son,N.T. ; Wagner,Mt. ; Sorman,E. ; Chen,W.M. ; Monemar,B. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.599-602, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

2. The pseudo-donor electronic states of a metastable defect in silicon studied by uniaxial stress spectroscopy

Svensson,J.H. ; Janzen,E. ; Kordina,O. ; Monemar,B.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.1 pp.327-332, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

3. Chromium in 4H and 6H SiC:Photcluminescence and Zeeman Studies

Son,N.T. ; Ellison,A. ; MacMillan,M.F. ; Kordina,O. ; Chen,W.M. ; Monemar,B. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.603-606, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

4. Effective-Mass-like Excited Pseudo-Donor States of a Complex Metastable Defect in Silicon

Svensson,J.H. ; Janzen,E. ; Kordina,O. ; Monemar,B.

Pub. info.:	Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992. pp.249-254, 1993. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	117-118

Conference Proceedings

5. The Configurational Change of a Metastable S-Cu Defect in Silicon

Chen,W.M. ; Janzen,E. ; Monemar,B. ; Henry,A. ; Frens,A.M. ; Bennebroek,M.T. ; Schmidt,J.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.2 pp.1179-1184, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

6. A Metastable Selenium-Related Center in Silicon

Henry,A. ; Sorman,E. ; Andersson,S. ; Chen,W.M. ; Monemar,B. ; Janzen,E.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.159-164, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

7. Ga Bound Excitons in 6H-SiC

Henry,A. ; Hallin,C. ; Ivanov,I.G. ; Bergnan,J.P. ; Kordina,O. ; Monemar,B. ; Janzen,E.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.91-96, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

8. Observation of Rapid Direct Charge Transfer between Deep Defects in Silicon

Frens,A.M. ; Bennebroek,M.T. ; Zakrzewski,A. ; Schmidt,J. ; Chen,W.M. ; Janzen,E. ; Lindstrom,J.L. ; Monemar,B.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.3 pp.1371-1374, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

9. The Neutral Silicon Vacancy in 6H and 4H SiC

Sorman,E. ; Chen,W.M. ; Son,N.T. ; Hallin,C. ; Lindstrom,J.L. ; Monemar,B. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.473-476, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

10.

Conference Proceedings

10. Magnetic resonance from a metastable sulfur-pair-related complex defect in silicon

Chen,W.M. ; Singh,M. ; Henry,A. ; Janzen,E. ; Monemar,B. ; Frens,A.M. ; Bennebroek,M.T. ; Schmidt,J. ; Reeson,K.J. ; Gwilliam,R.M.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.1 pp.251-256, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

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