1.

Conference Proceedings
Conference Proceedings
1. The pseudo-donor electronic states of a metastable defect in silicon studied by uniaxial stress spectroscopy
Svensson,J.H. ; Janzen,E. ; Kordina,O. ; Monemar,B.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.1  pp.327-332,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87
2.

Conference Proceedings
Conference Proceedings
2. Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD
Ellison,A. ; Kimoto,T. ; Ivanov,I.G. ; Wahab,Q. ; Henry,A. ; Kordina,O. ; Zhang,J. ; Hemmingsson,C.G. ; Gu,C.-Yu. ; Leys,M.R. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.103-106,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. Growth and Characterisation of SiC Power Device Material
Kordina,O. ; Henry,A. ; Janzen,E. ; ,C.H.Carter,Jr.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.97-102,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
4.

Conference Proceedings
Conference Proceedings
4. Observation of Metastable Defect in Electron Irradiated 6H-SiC
Hemmingsson,C.G. ; Son,N.T. ; Kordina,O. ; Lindstrom,J.L. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.561-564,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
5.

Conference Proceedings
Conference Proceedings
5. Changes in the Exciton-Related Photoluminescence of 4H- and 6H-SiC Induced by Uniaxial Stress
Ivanov,I.G. ; Lindefelt,U. ; Henry,A. ; Egilsson,T. ; Kordina,O. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.489-492,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
6.

Conference Proceedings
Conference Proceedings
6. Chromium in 4H and 6H SiC:Photcluminescence and Zeeman Studies
Son,N.T. ; Ellison,A. ; MacMillan,M.F. ; Kordina,O. ; Chen,W.M. ; Monemar,B. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.603-606,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
7.

Conference Proceedings
Conference Proceedings
7. Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC
Troffer,T. ; Pensl,G. ; Schoner,A. ; Henry,A. ; Hallin,C. ; Kordina,O. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.557-560,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
8.

Conference Proceedings
Conference Proceedings
8. Effective-Mass-like Excited Pseudo-Donor States of a Complex Metastable Defect in Silicon
Svensson,J.H. ; Janzen,E. ; Kordina,O. ; Monemar,B.
Pub. info.: Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992.  pp.249-254,  1993.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 117-118
9.

Conference Proceedings
Conference Proceedings
9. Ga Bound Excitons in 6H-SiC
Henry,A. ; Hallin,C. ; Ivanov,I.G. ; Bergnan,J.P. ; Kordina,O. ; Monemar,B. ; Janzen,E.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.91-96,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201