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36 results

Conference Proceedings

1. Optically Detected Wagnetic Resotrance Studies of Non-Radiative Recombination Centres in 6H SiC

Son,N.T. ; Wagner,Mt. ; Sorman,E. ; Chen,W.M. ; Monemar,B. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.599-602, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

2. Power Schottky Rectifiers and Microwave Transistors in 4H-SiC

Wahab,Q. ; Rudner,S. ; Janzen,E.

Pub. info.:	Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999). Part1 pp.668-671, 2000. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3975

Conference Proceedings

3. The pseudo-donor electronic states of a metastable defect in silicon studied by uniaxial stress spectroscopy

Svensson,J.H. ; Janzen,E. ; Kordina,O. ; Monemar,B.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.1 pp.327-332, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

4. Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD

Ellison,A. ; Kimoto,T. ; Ivanov,I.G. ; Wahab,Q. ; Henry,A. ; Kordina,O. ; Zhang,J. ; Hemmingsson,C.G. ; Gu,C.-Yu. ; Leys,M.R. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.103-106, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

5. Thickness Contour Mapping of SiC Epi-Films on SiC Substrates

MacMillan,M.F. ; Narfgren,P.O. ; Henry,A. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.645-648, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

6. The Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy Technique

Kakanakova-Georgieva,A. ; MacMillan,M.F. ; Nishino,S. ; Yakimova,R. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.147-150, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

7. Domain Occurrence in SiC Epitaxial Layers Grown by Sublimation

Tuominen,M. ; Yakimova,R. ; Kakanakova-Georgieva,A. ; MacMillan,M.F. ; Syvajarvi,M. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.151-154, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

8. Growth and Characterisation of SiC Power Device Material

Kordina,O. ; Henry,A. ; Janzen,E. ; ,C.H.Carter,Jr.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.97-102, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

9. CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the(0001)Basal Plane

Hallin,C. ; Ellison,A. ; Ivanov,I.G. ; Henry,A. ; Son,N.T. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.123-126, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

10.

Conference Proceedings

10. Infrared Reflectance of Extremely Thin AIN Epi-Films Deposited on SiC Substrates

MacMillan,M.F. ; Forsberg,U. ; Hultman,P.O.A.Persson.L. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.649-652, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

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Author: Janzen,E.