A New Approach to Design High Porosity Silicon Carbide Substrates.

A New Approach to Design High Porosity Silicon Carbide Substrates.

Author(s):

Publication title:

2010 SAE world congress : technical paper

Title of ser.:

Society of Automotive Engineers technical paper series

Ser. no.:

2010

Pub. Year:

2010

No.:

2010-01-0539

Paper no.:

2010-01-0539

Pages:

11

Pub. info.:

Warrendale, Penn.: Society of Automotive Engineers

ISSN:

01487191

Language:

English

Call no.:

S10400

Type:

Technical Paper

Details

TDL ID:	ZA00052110
Series ID:	PA00000058
Conf. info. (Name):	SAE 2010 World Congress
Conf. info. (Number):	2010
Conf. info. (Venue):	Detroit, MI, USA
Conf. info. (Date):	2010.04.13-2010.04.15
Note for article:	SAE 2010 World Congress, April 13-15, 2010, Detroit, Michigan, USA

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