Silicon Carbide Diode Characterization at High Temperature and Comparison with Silicon Diodes

Silicon Carbide Diode Characterization at High Temperature and Comparison with Silicon Diodes

Author(s):

Lebron-Velilla, R. ( NASA Glenn Research Center, Cleveland , OH )
Schwarze, G.
Adams, J. ( North Carolina Agricultural and Technical State University, Greensboro, NC )
Gardner, B. ( NASA Glenn Research Center, Cleveland, OH )

Publication title:

AIAA meeting papers on disc

Title of ser.:

AIAA Paper : International Energy Conversion Engineering Conference and Exhibit (IECEC)

Ser. no.:

2nd

Pub. Year:

2004

No.:

2004-5750

Paper no.:

AIAA Paper 2004-5750

Pub. info.:

[Reston, Va.]: American Institute of Aeronautics and Astronautics

ISSN:

10877215

Language:

English

Call no.:

A07400/200416 [CD-ROM 2004 Disc 16]

Type:

Technical Paper

Details

TDL ID:	ZA00001558
Series ID:	PA00000046
Conf. info. (Name):	International Energy Conversion Engineering Conference
Conf. info. (Number):	2nd
Conf. info. (Venue):	Providence, Rhode Island
Conf. info. (Date):	2004.08.16-2004.08.19

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