Ensemble Monte Carlo calculation of the hole initiated impact ionization rate in bulk GaAs and silicon using a k-dependent, numerical transition rate formulation

Ensemble Monte Carlo calculation of the hole initiated impact ionization rate in bulk GaAs and silicon using a k-dependent, numerical transition rate formulation

Author(s):

Oguzman, Ismail H. ( Georgia Tech Research Inst. )
Wang, Yang ( Georgia Tech Research Inst. )
Kolnik, Jan ( Georgia Tech Research Inst. )
Brennan, Kevin F. ( Georgia Tech Research Inst. )

Publication title:

NASA Technical Reports

Pub. Year:

1995

Vol.:

19960027053

Issue:

NASA-CR-201100

Pt.:

NAS 1.26:201100

Paper no.:

N96-28548

Page(from):

1

Page(to):

6

Pages:

6

Pub. info.:

National Aeronautics and Space Adminstration

Language:

English

Type:

Technical Paper

Details

TDL ID:

ZA00001432

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