Design of Dual Use, High Efficiency, 4H-SIC Schottky and MPS Diodes
- Author(s):
- Publication title:
- A collection of technical papers : 35th intersociety energy conversion engineering conference & exhibit (IECEC), Las Vegas, Nevada, 24 July - 28 July 2000
- Title of ser.:
- AIAA Paper : Intersociety Energy Conversion Engineering Conference and Exhibit (IECEC)
- Ser. no.:
- 2000
- Pub. Year:
- 2000
- Vol.:
- v. 1
- No.:
- 2000-2829
- Paper no.:
- AIAA-2000-2829
- Page(from):
- 180
- Page(to):
- 184
- Pages:
- 5
- Pub. info.:
- [Reston, VA]: American Institute of Aeronautics and Astronautics
- ISBN:
- 9781563473753 [1563473755]
- Language:
- English
- Call no.:
- A07400/002800
- Type:
- Technical Paper
Similar Items:
1
Conference Proceedings
2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
4
Conference Proceedings
A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices
Trans Tech Publications |
10
Conference Proceedings
First Demonstration of 2.1 kW Output Power at 425 MH2 Using 4H-SiC RF Power BJTs
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Society of Automotive Engineering, Inc. |