INFLUENCE OF OXYGEN ON DEFECT PRODUCTION IN ELECTRON-IRRADIATED, BORON-DOPED SILICON

INFLUENCE OF OXYGEN ON DEFECT PRODUCTION IN ELECTRON-IRRADIATED, BORON-DOPED SILICON

Author(s):

DeAngelis, Henry M. ( Rome Air Development Center )
Drevinsky, Peter J. ( Rome Air Development Center )

Publication title:

NASA Technical Reports

Pub. Year:

1984

Issue:

NASA-CP-2314

No.:

G3/44 17806

Pt.:

NAS 1.55:2314

Paper no.:

N84-29320

Page(from):

1

Page(to):

1

Pages:

1

Pub. info.:

National Aeronautics and Space Administration

Language:

English

Type:

Technical Paper

Details

TDL ID:

ZA00002949

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