A Charge Storage Based Enhancement Mode AlGaN/GaN High Electron Mobility Transistor

A Charge Storage Based Enhancement Mode AlGaN/GaN High Electron Mobility Transistor

Author(s):

Publication title:

Functional and Functionally Structured Materials II

Title of ser.:

Materials science forum

Ser. no.:

913

Pub. Year:

2018

Page(from):

870

Page(to):

878

Pages:

9

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035712445 [3035712441]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00066585
Series ID:	PA00000012
Conf. info. (Name):	Chinese Materials Conference 2017 (CMC 2017)
Conf. info. (Number):	2017
Conf. info. (Venue):	Yinchuan City, Ningxia, China
Conf. info. (Date):	2017.07.06-2017.07.12
Note for article:	Chinese Materials Conference 2017 (CMC 2017), Yinchuan City, Ningxia, China, July 06-12, 2017

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