Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed
- Author(s):
Q.J. Zhang G. Wang C. Jonas C. Capell S. Pickle P. Butler D.J. Lichtenwalner E. van Brunt S.H. Ryu J. Richmond B. Hull J. Casady S. Allen J.W. Palmour J.Q. Zhang - Publication title:
- Silicon Carbide and Related Materials 2016
- Title of ser.:
- Materials science forum
- Ser. no.:
- 897
- Pub. Year:
- 2017
- Page(from):
- 521
- Page(to):
- 524
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9783035710434 [3035710430]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
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