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1200 V SiC IE-UMOSFET with Low On-Resistance and High Threshold Voltage

Author(s):
S. Harada
Y. Kobayashi
A. Kinoshita
N. Ohse
T. Kojima
M. Iwaya
H. Shiomi
H. Kitai
S. Kyogoku
K. Ariyoshi
Y. Onishi
H. Kimura
7 more
Publication title:
Silicon Carbide and Related Materials 2016
Title of ser.:
Materials science forum
Ser. no.:
897
Pub. Year:
2017
Page(from):
497
Page(to):
500
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710434 [3035710430]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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