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Improved 4H-SiC N-MOSFET Interface Passivation by Combining N2O Oxidation with Boron Diffusion

Author(s):
M. Cabello
V. Soler
N. Mestres
J. Montserrat
J. Rebollo
J. Millán
P. Godignon
2 more
Publication title:
Silicon Carbide and Related Materials 2016
Title of ser.:
Materials science forum
Ser. no.:
897
Pub. Year:
2017
Page(from):
352
Page(to):
355
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710434 [3035710430]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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