Blank Cover Image

Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers

Author(s):
L. Lilja
I. Farkas
I. Booker
J. ul Hassan
E. Janzén
J.P. Bergman
1 more
Publication title:
Silicon Carbide and Related Materials 2016
Title of ser.:
Materials science forum
Ser. no.:
897
Pub. Year:
2017
Page(from):
238
Page(to):
241
Pages:
4
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710434 [3035710430]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

L. Lilja, J. Hassan, I.D. Booker, J.P. Bergman, E. Janzén

Trans Tech Publications

L. Lilja, J. Ul Hassan, E. Janzén, P. Bergman

Trans Tech Publications

L. Lilja, J. ul Hassan, I.D. Booker, P. Bergman, E. Janzén

Trans Tech Publications

L. Lilja, J. Ul Hassan, E. Janzén, P. Bergman

Trans Tech Publications

J. Hassan, L. Lilja, I.D. Booker, J.P. Bergman, E. Janzén

Trans Tech Publications

I.D. Booker, H. Abdalla, L. Lilja, J. Ul Hassan, P. Bergman

Trans Tech Publications

J.P. Bergman, I.D. Booker, L. Lilja, J. Hassan, E. Janzén

Trans Tech Publications

ul Hassan, J., Hallin, C., Bergman, J.P., Janzen, E.

Trans Tech Publications

H. Pedersen, A. Henry, J. Hassan, J.P. Bergman, E. Janzen

Trans Tech Publications

I.D. Booker, J. Hassan, E. Janzén, J.P. Bergman

Trans Tech Publications

R. Karhu, I. Booker, I.G. Ivanov, E. Janzén, J. Ul Hassan

Trans Tech Publications

1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12