The Effect of Charge Redistribution on Flat-Band Voltage Turnaround in 4H-SiC MOS Capacitors

The Effect of Charge Redistribution on Flat-Band Voltage Turnaround in 4H-SiC MOS Capacitors

Author(s):

Publication title:

Silicon Carbide and Related Materials 2016

Title of ser.:

Materials science forum

Ser. no.:

897

Pub. Year:

2017

Page(from):

167

Page(to):

172

Pages:

6

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710434 [3035710430]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00066569
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM
Conf. info. (Number):	2016
Conf. info. (Venue):	Halkidiki, Greece
Conf. info. (Date):	2016.09.25-2016.09.29
Note for article:	ECSCRM 2016, 25-29 September, 2016, Halkidiki, Greece

Similar Items:

1 Conference Proceedings Quantified Density of Active near Interface Oxide Traps in 4H-SiC MOS Capacitors H. Amini Moghadam, S. Dimitrijev, J.S. Han, A. Aminbeidokhti, D. Haasmann Trans Tech Publications	7 Conference Proceedings A P-Channel MOSFET on 4H-SiC Han, J.S., Cheong, K.Y., Dimitrijev, S., Laube, M., Pensl, G. Trans Tech Publications
2 Conference Proceedings Impact of Interface Traps on Current-Voltage Characteristics of 4H-SiC Schottky-Barrier Diodes H. Amini Moghadam, S. Dimitrijev, J.S. Han Trans Tech Publications	8 Conference Proceedings Characterization of La_xHf_yO Gate Dielectrics in 4H-SiC MOS Capacitor J.H. Xia, D.M. Martin, S.S. Suvanam, C.M. Zetterling, M. Östling Trans Tech Publications
3 Conference Proceedings Growth of Gate Oxides on 4H-SiC by NO at Low Partial Pressures D. Haasmann, S. Dimitrijev, J.S. Han, A. Iacopi Trans Tech Publications	9 Conference Proceedings MOS Capacitor Characteristics of 3C-SiC Films Deposited on Si Substrates at 1270℃ Li Wang, Sima Dimitrijev, Leonie Hold, Frederick Kong, Philip Tanner, Jisheng Han, Gunter Wagner Materials Research Society
4 Conference Proceedings Dipole Type Behavior of NO Grown Oxides on 4H-SiC D. Haasmann, H. Amini Moghadam, J.S. Han, A. Aminbeidokhti, A. Iacopi Trans Tech Publications	10 Conference Proceedings Flat-Band Voltage Shift of MOS Capacitors With Tantalum Nitride Gate Electrodes Induced by Post Metallization Annealing Kadoshima, M., Yamamoto, K., Fujiwara, H., Akiyama, K., Tominaga, K., Yamagishi, N., Iwamoto, K., Ohno, M., Yasuda, T., … Materials Research Society
5 Conference Proceedings Characterization of Non-Equilibrium Charge of MOS Capacitors on p-Type 4H SiC Cheong, K.Y., Dimitrijev, S., Han, J. Trans Tech Publications	11 Conference Proceedings Flatband Voltage Shift Depending on SiO2/SiC Interface Charges in 4H-SiC MOS Capacitors with AlON/SiO₂ Stacked Gate Dielectrics T. Hosoi, S. Azumo, K. Yamamoto, M. Aketa, Y. Kashiwagi Trans Tech Publications
6 Conference Proceedings Selection of SPICE Parameters and Equations for Effective Simulation of Circuits with 4H-SiC Power MOSFETs P. Tanner, S. Dimitrijev, H. Amini Moghadam, A. Aminbeidokhti, J.S. Han Trans Tech Publications	12 Conference Proceedings Effect of NO on the Electrical Characteristics of SiO2 Grown on p-Type 4H SiC Li, H. F., Dimitrijev, S., Harrison, H. B., Sweatman, D., Tanner, P. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12