Influence of Growth Temperature on Site Competition Effects during Chemical Vapor Deposition of 4H-SiC Layers

Influence of Growth Temperature on Site Competition Effects during Chemical Vapor Deposition of 4H-SiC Layers

Author(s):

M. Zielinski

Publication title:

Silicon Carbide and Related Materials 2016

Title of ser.:

Materials science forum

Ser. no.:

897

Pub. Year:

2017

Page(from):

79

Page(to):

82

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710434 [3035710430]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00066569
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM
Conf. info. (Number):	2016
Conf. info. (Venue):	Halkidiki, Greece
Conf. info. (Date):	2016.09.25-2016.09.29
Note for article:	ECSCRM 2016, 25-29 September, 2016, Halkidiki, Greece

Similar Items:

1 Conference Proceedings Influence of Site Competition Effects on Dopant Incorporation during Chemical Vapor Deposition of 4H-SiC Epitaxial Layers R. Arvinte, M. Zielinski, T. Chassagne, M. Portail, A. Michon Trans Tech Publications	7 Conference Proceedings Elaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor Deposition S. Jiao, M. Portail, J.F. Michaud, M. Zielinski, T. Chassagne Trans Tech Publications
2 Conference Proceedings Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers R. Arvinte, M. Zielinski, T. Chassagne, M. Portail, A. Michon Trans Tech Publications	8 Conference Proceedings CVD Growth of Graphene on SiC (0001): Influence of Substrate Offcut R. Dagher, B. Jouault, M. Paillet, M. Bayle, L. Nguyen, M. Portail, M. Zielinski, T. Chassagne, Y. Cordier, A. Michon Trans Tech Publications
3 Conference Proceedings p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum M. Zielinski, R. Arvinte, T. Chassagne, A. Michon, M. Portail Trans Tech Publications	9 Conference Proceedings Trends in Dopant Incorporation for 3C-SiC Films on Silicon M. Zielinski, M. Portail, H. Peyre, T. Chassagne, S. Ndiaye, B. Boyer, A. Leycuras, J. Camassel Trans Tech Publications
4 Conference Proceedings Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiC M. Zielinski, M. Portail, T. Chassagne, S. Juillaguet, H. Peyre Trans Tech Publications	10 Conference Proceedings Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD P. Kwasnicki, R. Arvinte, H. Peyre, M. Zielinski, L. Konczewicz Trans Tech Publications
5 Conference Proceedings Comparative Study of p-Type 4H-SiC Grown on n-Type and Semi Insulating 4H-SiC Substrates S. Contreras, L. Konczewicz, R. Arvinte, J. Ben Messaoud, T.L. Wang, H. Peyre, T. Chassagne, M. Zielinski, S. Juillaguet Trans Tech Publications	11 Conference Proceedings Silicon Growth on 3C-SiC(001)/Si(001): Pressure Influence and Thermal Effect R. Khazaka, M. Portail, P. Vennéguès, M. Zielinski, T. Chassagne Trans Tech Publications
6 Conference Proceedings Comparative Study of n-Type 4H-SiC: Raman vs Photoluminescence Spectroscopy P. Kwasnicki, R. Arvinte, H. Peyre, M. Zielinski, S. Juillaguet Trans Tech Publications	12 Conference Proceedings Role of Substrate Misorientation in Relaxation of 3C-SiC Layers on Silicon M. Zielinski, M. Portail, S. Roy, S. Kret, T. Chassagne Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12