Analysis of Trench-Filling Epitaxial Growth of 4H-SiC Based on Continuous Fluid Approximation Including Gibbs-Thomson Effect
- Author(s):
K. Mochizuki S.Y. Ji R. Kosugi K. Kojima Y. Yonezawa H. Okumura - Publication title:
- Silicon Carbide and Related Materials 2016
- Title of ser.:
- Materials science forum
- Ser. no.:
- 897
- Pub. Year:
- 2017
- Page(from):
- 47
- Page(to):
- 50
- Pages:
- 4
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9783035710434 [3035710430]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
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