3C-SiC Bulk Sublimation Growth on CVD Hetero-Epitaxial Seeding Layers

3C-SiC Bulk Sublimation Growth on CVD Hetero-Epitaxial Seeding Layers

Author(s):

Publication title:

Silicon Carbide and Related Materials 2016

Title of ser.:

Materials science forum

Ser. no.:

897

Pub. Year:

2017

Page(from):

15

Page(to):

18

Pages:

4

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9783035710434 [3035710430]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00066569
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM
Conf. info. (Number):	2016
Conf. info. (Venue):	Halkidiki, Greece
Conf. info. (Date):	2016.09.25-2016.09.29
Note for article:	ECSCRM 2016, 25-29 September, 2016, Halkidiki, Greece

Similar Items:

1 Conference Proceedings Physical Vapor Growth of Double Position Boundary Free, Quasi-Bulk 3C-SiC on High Quality 3C-SiC on Si CVD Templates P. Schuh, P. Vecera, A. Hirsch, M. Syväjärvi, G. Litrico Trans Tech Publications	7 Conference Proceedings SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate F. La Via, G. Izzo, M. Mauceri, G. Pistone, G. Condorelli Trans Tech Publications
2 Conference Proceedings 4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106 M. Mauceri, A. Pecora, G. Litrico, C. Vecchio, M. Puglisi Trans Tech Publications	8 Conference Proceedings Seed Surface Preparation for SiC Sublimation Growth Pelissier, B., Moulin, C., Pernot, E., Anikin, M., Grosse, P., Faure, C., Ferrand, B., Couchaud, M., Basset, G., Madar, … Trans Tech Publications
3 Conference Proceedings Application of 3-D X-Ray Computed Tomography for the In Situ* Visualization of the SiC Crystal Growth Interface during PVT Bulk Growth* G. Neubauer, M. Salamon, F. Roider, N. Uhlmann, P.J. Wellmann Trans Tech Publications	9 Conference Proceedings Stability Criteria for 4H-SiC Bulk Growth Straubinger, T.L., Bickermann, M., Hofmann, D., Weingaertner, R., Wellmann, P.J., Winnacker, A. Trans Tech Publications
4 Conference Proceedings Real-Time Measurement of the Evolution of Growth Facets during SiC PVT Bulk Growth Using 3-D X-Ray Computed Tomography G. Neubauer, M. Salamon, N. Uhlmann, P.J. Wellmann Trans Tech Publications	10 Conference Proceedings Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk Crystals Selder, M., Kadinski, L., Durst, F., Straubinger, T.L., Wellmann, P.J., Hofmann, D. Trans Tech Publications
5 Conference Proceedings Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization L. Calcagno, G. Izzo, G. Litrico, G. Galvagno, A. Firrincieli, S. Di Franco, M. Mauceri, S. Leone, G. Pistone, G. … Trans Tech Publications	11 Conference Proceedings Influence of Growth Temperature on the Evolution of Dislocations during PVT Growth of Bulk SiC Single Crystals S.A. Sakwe, P.J. Wellmann Trans Tech Publications
6 Conference Proceedings Modeling and Experimental Verification of SiC M-PVT Bulk Crystal Growth Wellmann, P.J., Muller, R., Pons, M. Trans Tech Publications	12 Conference Proceedings Fundamental Study of the Temperature Ramp-Up Influence for 3C-SiC Hetero-Epitaxy on Silicon(100) P. Hens, G. Wagner, A. Hölzing, R. Hock, P.J. Wellmann Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12