Comparison between organic spin-on BARC and carbon-containing CVD stack for 65-nm gate patterning

Comparison between organic spin-on BARC and carbon-containing CVD stack for 65-nm gate patterning

Author(s):

Jean-Damien Chapon

Publication title:

Advances in resist technology and processing XXII : 28 February-2 March, 2005, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5753(2)

Pub. Year:

2005

Pt.:

2

Page(from):

708

Page(to):

719

Pages:

12

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819457332 [0819457337]

Language:

English

Call no.:

P63600/5753-2

Type:

Conference Proceedings

Details

TDL ID:	ZA00014978
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in resist technology and processing
Conf. info. (Number):	2005 : 22th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2005.02.28-2005.03.02
Note for article:	22th Symposium on Advances in resist technology and processing, 28 February-2 March, 2005, San Jose, California, USA

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