Nondestructive characterization technique for most n-type semiconductors, including infrared detector materials

Nondestructive characterization technique for most n-type semiconductors, including infrared detector materials

Author(s):: F.W. Clarke
Publication title:: Growth and characterization of materials for infrared detectors II : 13-14 July, 1995, San Diego, California
Title of ser.:: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:: 2554
Pub. Year:: 1995
Page(from):: 97
Page(to):: 108
Pages:: 12
Pub. info.:: Bellingham, WA: Society of Photo-optical Instrumentation Engineers
ISSN:: 0277786X
ISBN:: 9780819419132 [0819419133]
Language:: English
Call no.:: P63600/2554
Type:: Conference Proceedings

Details

TDL ID:	ZA00057755
Series ID:	PA00000029
Conf. info. (Name):	Symposium on growth and characterization of materials for infrared detectors
Conf. info. (Number):	2nd
Conf. info. (Venue):	San Diego, CA, USA
Conf. info. (Date):	1995.07.13-1995.07.14
Note for article:	2nd Symposium on growth and characterization of materials for infrared detectors, July 13-14, 1995, San Diego, CA, USA. 2554-13

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