Use of nitrogen as a carrier gas in LP-MOCVD for growth of GaAs AlGaAs and quantum well infrared photodetectors heterostructures

Use of nitrogen as a carrier gas in LP-MOCVD for growth of GaAs AlGaAs and quantum well infrared photodetectors heterostructures

Author(s):

Publication title:

Optoelectronic integrated circuit materials, physics, and devices : 6-9 February 1995, San Jose, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

2397

Pub. Year:

1995

Page(from):

733

Page(to):

744

Pages:

12

Pub. info.:

Bellingham, WA: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819417442 [0819417440]

Language:

English

Call no.:

P63600/2397

Type:

Conference Proceedings

Details

TDL ID:	ZA00057600
Series ID:	PA00000029
Conf. info. (Name):	Symposium on optoelectronic integrated circuit materials, physics, and devices
Conf. info. (Number):	1994
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	1995.02.06-1995.02.09
Note for article:	1994 Symposium on optoelectronic integrated circuit materials, physics, and devices, February 6-9, 1995, San Jose, CA, USA. 2397-83

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