Characterization of a high-quality and UV-transparent PECVD silicon nitride film for nonvolatile memory applications

Characterization of a high-quality and UV-transparent PECVD silicon nitride film for nonvolatile memory applications

Author(s):

Publication title:

Microelectronics technology and process integration : 20-21 October 1994, Austin, Texas

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

2335

Pub. Year:

1994

Page(from):

282

Page(to):

290

Pages:

9

Pub. info.:

Bellingham, WA: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819416681 [0819416681]

Language:

English

Call no.:

P63600/2335

Type:

Conference Proceedings

Details

TDL ID:	ZA00057538
Series ID:	PA00000029
Conf. info. (Name):	Symposium on microelectronics technology and process integration
Conf. info. (Number):	1994
Conf. info. (Venue):	Austin, TX, USA
Conf. info. (Date):	1994.10.20-1994.10.21
Note for article:	1994 Symposium on microelectronics technology and process integration, October 20-21, 1994, Austin, TX, USA. 2335-32

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