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Characterization and modeling of base current in n-p-n polysilicon emitter bipolar transistors using low-frequency noise analysis

Author(s):
Publication title:
Microelectronics manufacturability, yield, and reliability : 20-21 October 1994, Austin, Texas
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
2334
Pub. Year:
1994
Page(from):
195
Page(to):
202
Pages:
8
Pub. info.:
Bellingham, WA: Society of Photo-optical Instrumentation Engineers
ISSN:
0277786X
ISBN:
9780819416674 [0819416673]
Language:
English
Call no.:
P63600/2334
Type:
Conference Proceedings

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