(321d) Growth and Transfer of High Aspect-Ratio Nanowires Onto Flexible Substrate

(321d) Growth and Transfer of High Aspect-Ratio Nanowires Onto Flexible Substrate

Author(s):

Publication title:

Nanoscale Science and Engineering Forum 2013 : Core Programming Area at the 2013 AIChE Annual Meeting: Global Challenges for Engineering a Sustainable Future : San Francisco, California, USA, 3-8 November 2013

Title of ser.:

AIChE Conference Proceedings

Ser. no.:

2013

Pub. Year:

2013

Page(from):

139

Page(to):

140

Pages:

2

Pub. info.:

New York: American Institute of Chemical Engineers

ISBN:

9781634390477 [1634390474]

Language:

English

Call no.:

A08000/2013 [CD-ROM]

Type:

Conference Proceedings

Details

TDL ID:	ZA00061250
Series ID:	PA00000008
Conf. info. (Name):	Nanoscale Science and Engineering Forum ; AIChE Annual Meeting
Conf. info. (Number):	2013
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2013.11.03-2013.11.08
Note for article:	2013 AIChE Annual Meeting. Nanoscale Science and Engineering Forum, San Francisco, California, USA, 3-8 November 2013

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