(711d) Atomic Layer Deposition of AlN Thin Films As Gate Dielectrics for Wide Bandgap Semiconductors

(711d) Atomic Layer Deposition of AlN Thin Films As Gate Dielectrics for Wide Bandgap Semiconductors

Author(s):

Publication title:

2012 AIChE annual meeting, David L. Lawrence Convention Center, Pittsburgh, PA, October 28 - November 2, 2012 : Conference proceedings. Non-topical conferences

Title of ser.:

AIChE Conference Proceedings

Ser. no.:

P-270

Pub. Year:

2012

Pt.:

Materials Engineering and Sciences Division

Pub. info.:

New York: American Institute of Chemical Engineers

ISBN:

9780816910731 [0816910731]

Language:

English

Call no.:

A08000/2012 [CD-ROM]

Type:

Conference Proceedings

Details

TDL ID:	ZA00061224
Series ID:	PA00000008
Conf. info. (Name):	AIChE Annual Meeting ; Particle Technology Forum ; North American Mixing Forum ; Computational Molecular Science and Engineering Forum ; Nanoscale Science and Engineering Forum ; Sustainable Engineering Forum ; Chemical Engineering & the Law Forum
Conf. info. (Number):	2012
Conf. info. (Venue):	Philadelphia, PA, USA
Conf. info. (Date):	2012.10.28-2012.11.02
Note for article:	[HTML document] 2012 AIChE annual meeting, Pittsburgh, PA, October 28 - November 2, 2012. Materials Engineering and Sciences Division (711d)

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