734h. First Principles-Based Atomistic Modeling of the Growth and Structure of Native Defects In Silicon

734h. First Principles-Based Atomistic Modeling of the Growth and Structure of Native Defects In Silicon

Author(s):

Publication title:

AIChE annual meeting, Philadelphia 100 : conference proceedings : 1908 to 2008 : 2008 AIChE annual meeting, Philadelphia, PA, November 16-21, 2008. Non-topical conferences

Title of ser.:

AIChE Conference Proceedings

Ser. no.:

P-255

Pub. Year:

2008

Pt.:

21

Page(from):

P129234

Pub. info.:

New York: American Institute of Chemical Engineers

ISBN:

9780816910502 [0816910502]

Language:

English

Call no.:

A08000/2008 [CD-ROM]

Type:

Conference Proceedings

Details

TDL ID:	ZA00061216
Series ID:	PA00000008
Conf. info. (Name):	AIChE Annual Meeting ; Particle Technology Forum ; North American Mixing Forum ; Computational Molecular Science and Engineering Forum ; Nanoscale Science and Engineering Forum ; Sustainable Engineering Forum
Conf. info. (Number):	2008
Conf. info. (Venue):	Philadelphia, PA, USA
Conf. info. (Date):	2008.11.16-2008.11.21
Note for article:	[HTML document] 2008 AIChE Annual Meeting. Computational Molecular Science and Engineering Forum, Philadelphia, PA, November 16-21, 2008

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